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On behalf of the Program and Executive Committee, it is my pleasure to invite you to IEEE’s 73rd Electronic Components and Technology Conference (ECTC), which will be held at JW Marriott Orlando, Grande Lakes, Orlando, Florida from May 30 to June 2, 2023.

Heterogeneous Integration in the AI Era Subi Kengeri, VP AI System Solutions, Applied Materials

The Direct Bond Interconnect (DBI®) Ultra technology, a die-to-wafer (D2W) and die-to-die (D2D) hybrid bonding, is a platform technology that offers a hermetically sealed solid Cu-Cu interconnect through room temperature bonding and low temperature anneal. DBI wafer to wafer (W2W) bonding has been in high volume production since 2015.

Advanced package modules built with a hybrid bonding technology offer enhanced thermal performance, reliability, and scalability with the Cu-Cu interconnect. Direct Bond Interconnect (DBI®) Ultra technology is a die-to-wafer (D2W) or die-to-die (D2D) high volume manufacturing compatible process that offers handling die on tape, assembly at room temperature, and low temperature interconnect formation.

Direct Bond Interconnect (DBI®) is a hybrid bonding technique that is currently being adopted in the semiconductor industry due to its versatility at enabling zero standoff bonding. It is used in a large segment of products such as Back Side Illuminated (BSI) CMOS image sensors and starting to appear in other applications including 3DNAND.

Direct bonding is a spontaneous dielectric-to-dielectric bond at room temperature with a metal-to-metal connection (here Cu-to-Cu bond) by a low temperature batch annealing process (200°C – 300°C). Therefore, the direct bonding process is attractive for heterogeneous integration and has several advantages over the micro bump bonding with solder [1, 2]. Furthermore, the interconnect density and scaling of interconnects is less limited for this metal cap free bonding process.

Hybrid bonding is becoming increasingly important as the semiconductor industry plans for the next generation of packaging where high bandwidth architectures are required to achieve improved compute performance demands. The scalability challenges in solder-based interconnects at <; 35 μm pitch has fueled the adoption of hybrid bonding as a technology with enhanced scalability.

Hybrid bonding is becoming increasingly important as the semiconductor industry plans for the next generation of packaging where high bandwidth architectures are required to achieve improved compute performance demands. The scalability challenges in solder-based interconnects at <; 35 μm pitch has fueled the adoption of hybrid bonding as a technology with enhanced scalability.

The direct bond interconnect (DBI®) technology is a platform technology that offers a hermetically sealed hybrid bond with solid metal-metal (Cu-Cu is the most common) interconnect at a relatively low thermal budget. The Xperi wafer to wafer hybrid bonding technology has been in high volume production since 2015.

The 17th Annual Device Packaging Conference (DPC 2021) will be held as an online global event, from April 12-15, 2021. It is an international event organized by the International Microelectronics Assembly and Packaging Society (IMAPS).

The direct bond interconnect (DBI®) Ultra technology, a low-temperature die-to-wafer (D2W) and die-to-die (D2D) hybrid bond, is a platform technology to reliably achieve submicron interconnect pitches. A reliable D2W and D2D assembly with submicron pitch capability will enable widespread disaggregation and chiplet architecture innovation.